AUIRFS4410Z
| Parameters | |
|---|---|
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 230W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 230W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9m Ω @ 58A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 150μA |
| Contact Plating | Tin |
| Input Capacitance (Ciss) (Max) @ Vds | 4820pF @ 50V |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Current - Continuous Drain (Id) @ 25°C | 97A Tc |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
| Number of Pins | 3 |
| Rise Time | 52ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Transistor Element Material | SILICON |
| Vgs (Max) | ±20V |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Fall Time (Typ) | 57 ns |
| Published | 2011 |
| Turn-Off Delay Time | 43 ns |
| Series | HEXFET® |
| Continuous Drain Current (ID) | 97A |
| JESD-609 Code | e3 |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Part Status | Discontinued |
| Drain-source On Resistance-Max | 0.009Ohm |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Drain to Source Breakdown Voltage | 100V |
| Avalanche Energy Rating (Eas) | 242 mJ |
| Number of Terminations | 2 |
| Nominal Vgs | 2 V |
| ECCN Code | EAR99 |
| Height | 4.83mm |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY |
| Length | 10.67mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| Subcategory | FET General Purpose Power |
| REACH SVHC | No SVHC |
| Technology | MOSFET (Metal Oxide) |
| RoHS Status | ROHS3 Compliant |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IRFS4410 |
See Relate Datesheet
