Parameters | |
---|---|
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 120W Tc |
Element Configuration | Single |
Power Dissipation | 120W |
Turn On Delay Time | 7.4 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 14m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1870pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 30A Tc |
Gate Charge (Qg) (Max) @ Vgs | 92nC @ 10V |
Rise Time | 51ns |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 100 ns |
Turn-Off Delay Time | 83 ns |
Continuous Drain Current (ID) | 30A |
Gate to Source Voltage (Vgs) | 16V |
Drain to Source Breakdown Voltage | 55V |
Height | 2.39mm |
Length | 6.73mm |
Width | 6.22mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2000 |
Series | HEXFET® |
Part Status | Discontinued |