BFG35,115
| Parameters | |
|---|---|
| Frequency - Transition | 4GHz |
| Power Dissipation-Max (Abs) | 1W |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B |
| Power Dissipation Ambient-Max | 1W |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | 175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1995 |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.75 |
| Subcategory | Other Transistors |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BFG35 |
| Pin Count | 4 |
| Reference Standard | CECC |
| JESD-30 Code | R-PDSO-G4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Power - Max | 1W |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 100mA 10V |
| Voltage - Collector Emitter Breakdown (Max) | 18V |
| Current - Collector (Ic) (Max) | 150mA |
| Transition Frequency | 4000MHz |
See Relate Datesheet
