BFP540FESDH6327XTSA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-SMD, Flat Leads |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 250mW |
| Terminal Position | DUAL |
| Frequency | 30GHz |
| Base Part Number | BFP540 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 250mW |
| Transistor Application | AMPLIFIER |
| Halogen Free | Halogen Free |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 4.5V |
| Max Collector Current | 80mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA 3.5V |
| Collector Emitter Breakdown Voltage | 5V |
| Gain | 20dB |
| Transition Frequency | 30000MHz |
| Max Breakdown Voltage | 5V |
| Collector Base Voltage (VCBO) | 10V |
| Emitter Base Voltage (VEBO) | 1V |
| Collector-Base Capacitance-Max | 0.26pF |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.4dB @ 1.8GHz |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
