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BPW85B

Phototransistors NPN Phototransistor 70V 100mW 850nm


  • Manufacturer: Vishay Semiconductor Opto Division
  • Nocochips NO: 879-BPW85B
  • Package: Radial
  • Datasheet: PDF
  • Stock: 408
  • Description: Phototransistors NPN Phototransistor 70V 100mW 850nm (Kg)

Details

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Parameters
Height 4.5mm
Length 3.4mm
Width 3.4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case Radial
Number of Pins 2
Operating Temperature -40°C~100°C TA
Packaging Bulk
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 100°C
Min Operating Temperature -40°C
Max Power Dissipation 100mW
Orientation Top View
Current Rating 50mA
Number of Elements 1
Polarity NPN
Number of Channels 1
Power Dissipation 100mW
Viewing Angle 50°
Power - Max 100mW
Lens Style Clear, Domed
Rise Time 2μs
Fall Time (Typ) 2.3 μs
Collector Emitter Voltage (VCEO) 70V
Max Collector Current 50mA
Collector Emitter Breakdown Voltage 70V
Lens Color Clear
Power Consumption 100mW
Voltage - Collector Emitter Breakdown (Max) 70V
Current - Collector (Ic) (Max) 100mA
Wavelength 850nm
Collector Emitter Saturation Voltage 300mV
Dark Current 200nA
Current - Dark (Id) (Max) 200nA
See Relate Datesheet

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