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BPW96C

Phototransistors NPN Phototransistor 70V 150mW 850nm


  • Manufacturer: Vishay Semiconductor Opto Division
  • Nocochips NO: 879-BPW96C
  • Package: Radial, 5mm Dia (T 1 3/4)
  • Datasheet: PDF
  • Stock: 628
  • Description: Phototransistors NPN Phototransistor 70V 150mW 850nm (Kg)

Details

Tags

Parameters
Current - Collector (Ic) (Max) 50mA
Wavelength 850nm
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 70V
Dark Current 200nA
Current - Dark (Id) (Max) 200nA
Height 8.6mm
Length 5.75mm
Width 5.75mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case Radial, 5mm Dia (T 1 3/4)
Number of Pins 2
Operating Temperature -40°C~100°C TA
Packaging Bulk
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 100°C
Min Operating Temperature -40°C
Max Power Dissipation 150mW
Orientation Top View
Current Rating 50mA
Number of Elements 1
Polarity NPN
Number of Channels 1
Power Dissipation 150mW
Viewing Angle 40°
Power - Max 150mW
Lens Style Clear, Domed
Rise Time 2μs
Fall Time (Typ) 2.3 μs
Collector Emitter Voltage (VCEO) 70V
Max Collector Current 50mA
Collector Emitter Breakdown Voltage 70V
Lens Color Clear
Power Consumption 150mW
Voltage - Collector Emitter Breakdown (Max) 70V
See Relate Datesheet

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