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BSC019N04NSGATMA1

Trans MOSFET N-CH 40V 29A 8-Pin TDSON EP


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC019N04NSGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 550
  • Description: Trans MOSFET N-CH 40V 29A 8-Pin TDSON EP (Kg)

Details

Tags

Parameters
Vgs(th) (Max) @ Id 4V @ 85μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 20V
Current - Continuous Drain (Id) @ 25°C 30A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 108nC @ 10V
Rise Time 5.6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 29A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Pulsed Drain Current-Max (IDM) 400A
Factory Lead Time 1 Week
Avalanche Energy Rating (Eas) 295 mJ
Contact Plating Tin
RoHS Status ROHS3 Compliant
Mount Surface Mount
Mounting Type Surface Mount
Lead Free Contains Lead
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 125W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.9m Ω @ 50A, 10V
See Relate Datesheet

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