BSD223PH6327XTSA1
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| Series | OptiMOS™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| HTS Code | 8541.21.00.95 |
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 250mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | -350mA |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BSD223 |
| Reference Standard | AEC-Q101 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 3.8 ns |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 1.2 Ω @ 390mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 1.5μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 56pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 0.62nC @ 4.5V |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 20V |
| Turn-Off Delay Time | 5.1 ns |
| Continuous Drain Current (ID) | 390mA |
| Gate to Source Voltage (Vgs) | 12V |
| Max Dual Supply Voltage | -20V |
| Drain Current-Max (Abs) (ID) | 0.39A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Feedback Cap-Max (Crss) | 22 pF |
| Height | 800μm |
| Length | 2mm |
| Width | 1.25mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 1 Week |
See Relate Datesheet
