Parameters | |
---|---|
Vgs(th) (Max) @ Id | 1.2V @ 1.6μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 47pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 950mA 530mA |
Gate Charge (Qg) (Max) @ Vgs | 0.34nC @ 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Continuous Drain Current (ID) | 530mA |
Gate to Source Voltage (Vgs) | 12V |
Max Dual Supply Voltage | -20V |
Drain Current-Max (Abs) (ID) | 0.95A |
Drain-source On Resistance-Max | 0.35Ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-VSSOP, SC-88, SOT-363 |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
HTS Code | 8541.21.00.95 |
Max Power Dissipation | 500mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | BSD235 |
Reference Standard | AEC-Q101 |
Number of Elements | 2 |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Operating Mode | ENHANCEMENT MODE |
FET Type | N and P-Channel |
Rds On (Max) @ Id, Vgs | 350m Ω @ 950mA, 4.5V |