BSG0811NDATMA1
| Parameters | |
|---|---|
| Number of Terminations | 7 |
| Max Power Dissipation | 2.5W |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-N7 |
| Number of Elements | 2 |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Power - Max | 2.5W |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 19A 41A |
| Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 4.5V |
| Continuous Drain Current (ID) | 41A |
| Max Dual Supply Voltage | 25V |
| Drain Current-Max (Abs) (ID) | 19A |
| Drain-source On Resistance-Max | 0.004Ohm |
| Pulsed Drain Current-Max (IDM) | 160A |
| Avalanche Energy Rating (Eas) | 30 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate, 4.5V Drive |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | OptiMOS™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
See Relate Datesheet
