Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | Automotive, AEC-Q101, OptiMOS™ |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Max Power Dissipation | 500mW |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 2 |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 5.6 ns |
FET Type | 2 P-Channel (Dual) |
Rds On (Max) @ Id, Vgs | 80m Ω @ 2A, 10V |
Vgs(th) (Max) @ Id | 1V @ 11μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
Rise Time | 7.7ns |
Drain to Source Voltage (Vdss) | 30V |
Fall Time (Typ) | 2.8 ns |
Turn-Off Delay Time | 15.3 ns |
Continuous Drain Current (ID) | 2A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | -30V |
Drain Current-Max (Abs) (ID) | 2A |
Drain-source On Resistance-Max | 0.08Ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate, 4.5V Drive |
Feedback Cap-Max (Crss) | 18 pF |
Height | 1mm |
Length | 2.9mm |
Width | 1.6mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |