Parameters | |
---|---|
Number of Elements | 2 |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.6W |
FET Type | 2 P-Channel (Dual) |
Rds On (Max) @ Id, Vgs | 67m Ω @ 4.6A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 25μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 1095pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
Rise Time | 13ns |
Drain to Source Voltage (Vdss) | 20V |
Continuous Drain Current (ID) | 4A |
Gate to Source Voltage (Vgs) | 12V |
Max Dual Supply Voltage | -20V |
Drain-source On Resistance-Max | 0.067Ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 540.001716mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Max Power Dissipation | 1.6W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | BSO211 |
Pin Count | 8 |
Qualification Status | Not Qualified |