BSP135H6327XTSA1
| Parameters | |
|---|---|
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2012 |
| Series | SIPMOS® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Voltage | 600V |
| Power Dissipation-Max | 1.8W Ta |
| Element Configuration | Single |
| Current | 12A |
| Power Dissipation | 1.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5.4 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 45 Ω @ 120mA, 10V |
| Vgs(th) (Max) @ Id | 1V @ 94μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 146pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 120mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 4.9nC @ 5V |
| Rise Time | 5.6ns |
| Drive Voltage (Max Rds On,Min Rds On) | 0V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 182 ns |
| Turn-Off Delay Time | 28 ns |
| Continuous Drain Current (ID) | 120mA |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 600V |
| Drain to Source Breakdown Voltage | 600V |
| Recovery Time | 130 ns |
| FET Feature | Depletion Mode |
| Height | 1.5mm |
| Length | 6.5mm |
| Width | 3.5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
See Relate Datesheet
