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BSP220,115

NEXPERIA - BSP220,115 - MOSFET P-CH 200V 225MA SOT223


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BSP220,115
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 759
  • Description: NEXPERIA - BSP220,115 - MOSFET P-CH 200V 225MA SOT223 (Kg)

Details

Tags

Parameters
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 90pF @ 25V
Current - Continuous Drain (Id) @ 25°C 225mA Ta
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) -225mA
Drain Current-Max (Abs) (ID) 0.225A
DS Breakdown Voltage-Min 200V
Feedback Cap-Max (Crss) 15 pF
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
See Relate Datesheet

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