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BSP89,115

NEXPERIA - BSP89,115 - MOSFET, N CH, 240V, 375MA, SOT223


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BSP89,115
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 705
  • Description: NEXPERIA - BSP89,115 - MOSFET, N CH, 240V, 375MA, SOT223 (Kg)

Details

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Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 340mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 375mA Ta
Drain to Source Voltage (Vdss) 240V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 373mA
Drain-source On Resistance-Max 7.5Ohm
Pulsed Drain Current-Max (IDM) 1.5A
DS Breakdown Voltage-Min 240V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Active
See Relate Datesheet

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