Parameters | |
---|---|
Number of Elements | 2 |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 280mW |
Turn On Delay Time | 2 ns |
Power - Max | 420mW |
FET Type | 2 N-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.6 Ω @ 300mA, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 4.5V |
Rise Time | 3ns |
Fall Time (Typ) | 4 ns |
Turn-Off Delay Time | 9 ns |
Continuous Drain Current (ID) | 320mA |
Threshold Voltage | 1.2V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 60V |
Drain Current-Max (Abs) (ID) | 0.32A |
Drain to Source Breakdown Voltage | 60V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Surface Mount | YES |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
Series | Automotive, AEC-Q101, TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Resistance | 1.6Ohm |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Max Power Dissipation | 420mW |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 6 |