Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | SOT-1205, 8-LFPAK56 |
Surface Mount | YES |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | Automotive, AEC-Q101, TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Additional Feature | AVALANCHE RATED |
Max Power Dissipation | 68W |
Terminal Form | GULL WING |
Reach Compliance Code | not_compliant |
Pin Count | 8 |
Reference Standard | AEC-Q101; IEC-60134 |
JESD-30 Code | R-PDSO-G6 |
Number of Elements | 2 |
Number of Channels | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 9.5 ns |
Power - Max | 68W |
FET Type | 2 N-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5.1m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 2352pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 31.1nC @ 10V |
Rise Time | 12.5ns |
Fall Time (Typ) | 13 ns |
Turn-Off Delay Time | 19.5 ns |
Continuous Drain Current (ID) | 40A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 30V |
Drain-source On Resistance-Max | 0.0051Ohm |
Drain to Source Breakdown Voltage | 30V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
RoHS Status | ROHS3 Compliant |