CM200DY-12H
| Parameters | |
|---|---|
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Number of Pins | 7 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Published | 1998 |
| Series | IGBTMOD™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 780W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 7 |
| JESD-30 Code | R-XUFM-X5 |
| Number of Elements | 2 |
| Configuration | Half Bridge |
| Element Configuration | Dual |
| Power Dissipation | 780W |
| Case Connection | ISOLATED |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 2.8V |
| Max Collector Current | 200A |
| Current - Collector Cutoff (Max) | 1mA |
| Collector Emitter Breakdown Voltage | 600V |
| Input Capacitance | 20nF |
| Turn On Time | 750 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 200A |
| Turn Off Time-Nom (toff) | 600 ns |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 20nF @ 10V |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
