Parameters | |
---|---|
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | Module |
Number of Pins | 17 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Published | 2001 |
Series | IGBTMOD™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 17 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 660W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Number of Elements | 6 |
Configuration | Three Phase Inverter |
Case Connection | ISOLATED |
Power - Max | 660W |
Transistor Application | MOTOR CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 4V |
Max Collector Current | 75A |
Current - Collector Cutoff (Max) | 1mA |
Collector Emitter Breakdown Voltage | 1.7kV |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Input Capacitance | 10.5nF |
Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 75A |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 10.5nF @ 10V |
VCEsat-Max | 4 V |
RoHS Status | RoHS Compliant |