DMG1023UV-7
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Weight | 3.005049mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 750mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD |
| Subcategory | Other Transistors |
| Max Power Dissipation | 530mW |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | DMG1023UV |
| Pin Count | 6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 530mW |
| Turn On Delay Time | 5.1 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 750m Ω @ 430mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 59.76pF @ 16V |
| Gate Charge (Qg) (Max) @ Vgs | 0.62nC @ 4.5V |
| Rise Time | 8.1ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 20.7 ns |
| Turn-Off Delay Time | 28.4 ns |
| Continuous Drain Current (ID) | 1.03A |
| Threshold Voltage | -1V |
| Gate to Source Voltage (Vgs) | 6V |
| Drain to Source Breakdown Voltage | -20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 600μm |
| Length | 1.7mm |
| Width | 1.25mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
