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DMG504010R

Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm


  • Manufacturer: Panasonic Electronic Components
  • Nocochips NO: 590-DMG504010R
  • Package: 6-SMD, Flat Leads
  • Datasheet: PDF
  • Stock: 250
  • Description: Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
HTS Code 8541.21.00.75
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 150mW
Base Part Number DMG50401
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power - Max 150mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 150MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA 10V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 150MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
hFE Min 210
Height 600μm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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