DMN2215UDM-7
| Parameters | |
|---|---|
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 650mW |
| Turn On Delay Time | 8 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 2.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 188pF @ 10V |
| Rise Time | 3.8ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 3.8 ns |
| Turn-Off Delay Time | 19.6 ns |
| Continuous Drain Current (ID) | 2A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 2A |
| Drain-source On Resistance-Max | 0.1Ohm |
| Drain to Source Breakdown Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1.1mm |
| Length | 3mm |
| Width | 1.6mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 650mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | DMN2215UDM |
| Pin Count | 6 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Element Configuration | Dual |
See Relate Datesheet
