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DMP2100U-7

MOSFET P CH 20V 4.3A SOT23


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMP2100U-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 600
  • Description: MOSFET P CH 20V 4.3A SOT23 (Kg)

Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 38m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 216pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.3A Ta
Gate Charge (Qg) (Max) @ Vgs 9.1nC @ 4.5V
Rise Time 155ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 10V
Vgs (Max) ±10V
Fall Time (Typ) 423 ns
Turn-Off Delay Time 688 ns
Continuous Drain Current (ID) 4.3A
Threshold Voltage -1.4V
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage -20V
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 800mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 80 ns
FET Type P-Channel
Transistor Application SWITCHING
See Relate Datesheet

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