Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 73.992255mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
Subcategory | Other Transistors |
Max Power Dissipation | 1.8W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 8 |
Number of Elements | 2 |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.8W |
Turn On Delay Time | 6 ns |
FET Type | 2 P-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 65m Ω @ 5A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 336pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 10V |
Rise Time | 5ns |
Drain to Source Voltage (Vdss) | 30V |
Fall Time (Typ) | 5 ns |
Turn-Off Delay Time | 17.6 ns |
Continuous Drain Current (ID) | 4.4A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.065Ohm |
Drain to Source Breakdown Voltage | 30V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
Height | 1.5mm |
Length | 5.3mm |
Width | 4.1mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |