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DN3135K1-G

Trans MOSFET N-CH Si 350V 0.072A 3-Pin SOT-23 T/R


  • Manufacturer: Microchip Technology
  • Nocochips NO: 536-DN3135K1-G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 466
  • Description: Trans MOSFET N-CH Si 350V 0.072A 3-Pin SOT-23 T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 360mW Ta
Element Configuration Single
Power Dissipation 360mW
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35 Ω @ 150mA, 0V
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 72mA Tj
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 0V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 72mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.072A
Drain to Source Breakdown Voltage 350V
FET Feature Depletion Mode
Height 950μm
Length 2.9mm
Width 1.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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