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DTC113EET1G

Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-DTC113EET1G
  • Package: SC-75, SOT-416
  • Datasheet: PDF
  • Stock: 527
  • Description: Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (Kg)

Details

Tags

Parameters
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage 50V
Resistor - Base (R1) 1 k Ω
Resistor - Emitter Base (R2) 1 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
See Relate Datesheet

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