Parameters | |
---|---|
Input Capacitance (Ciss) (Max) @ Vds | 4245pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 34.9A Tc |
Factory Lead Time | 1 Week |
Gate Charge (Qg) (Max) @ Vgs | 112nC @ 10V |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Mount | Through Hole |
Rise Time | 17ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Mounting Type | Through Hole |
Vgs (Max) | ±30V |
Package / Case | TO-3P-3, SC-65-3 |
Number of Pins | 3 |
Fall Time (Typ) | 4 ns |
Weight | 6.401g |
Turn-Off Delay Time | 92 ns |
Transistor Element Material | SILICON |
Continuous Drain Current (ID) | 34.9A |
Operating Temperature | -55°C~150°C TJ |
Threshold Voltage | 3.7V |
Gate to Source Voltage (Vgs) | 30V |
Packaging | Tube |
Published | 2013 |
Drain-source On Resistance-Max | 0.095Ohm |
Series | FRFET®, SuperFET® II |
Drain to Source Breakdown Voltage | 600V |
Nominal Vgs | 3.7 V |
JESD-609 Code | e3 |
Height | 20.1mm |
Length | 16.2mm |
Width | 5mm |
Pbfree Code | yes |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 312W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 312W |
Turn On Delay Time | 27 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 95m Ω @ 18A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |