Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Number of Pins | 6 |
Weight | 36mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2001 |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 115MOhm |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -20V |
Max Power Dissipation | 960mW |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | -2.3A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Qualification Status | Not Qualified |
Number of Elements | 2 |
Number of Channels | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 960mW |
Turn On Delay Time | 8 ns |
Power - Max | 700mW |
FET Type | 2 P-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 115m Ω @ 2.3A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 467pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 4.5V |
Rise Time | 13ns |
Drain to Source Voltage (Vdss) | 20V |
Fall Time (Typ) | 13 ns |
Turn-Off Delay Time | 18 ns |
Continuous Drain Current (ID) | 2.3A |
Threshold Voltage | -900mV |
Gate to Source Voltage (Vgs) | 8V |
Drain to Source Breakdown Voltage | -20V |
Dual Supply Voltage | -20V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Max Junction Temperature (Tj) | 150°C |
FET Feature | Logic Level Gate |
Nominal Vgs | -900 mV |
Height | 1.1mm |
Length | 3mm |
Width | 1.7mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |