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FDG6332C

FDG6332C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDG6332C
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 208
  • Description: FDG6332C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 300MOhm
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Form GULL WING
Current Rating 700mA
Number of Elements 2
Voltage 20V
Element Configuration Dual
Current 7A
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 300m Ω @ 700mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 113pF @ 10V
Current - Continuous Drain (Id) @ 25°C 700mA 600mA
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
Rise Time 14ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 14 ns
Turn-Off Delay Time 6 ns
Continuous Drain Current (ID) 700mA
Threshold Voltage 1.1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1.1mm
Length 2mm
Width 1.25mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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