Parameters | |
---|---|
Vgs(th) (Max) @ Id | 3V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 4225pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 22A Ta 42A Tc |
Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Rise Time | 6ns |
Mount | Surface Mount |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Mounting Type | Surface Mount |
Vgs (Max) | ±20V |
Package / Case | 8-PowerTDFN |
Fall Time (Typ) | 5 ns |
Number of Pins | 8 |
Turn-Off Delay Time | 35 ns |
Weight | 68.1mg |
Continuous Drain Current (ID) | 42A |
Transistor Element Material | SILICON |
Threshold Voltage | 1.6V |
Operating Temperature | -55°C~150°C TJ |
JEDEC-95 Code | MO-240AA |
Gate to Source Voltage (Vgs) | 20V |
Packaging | Tape & Reel (TR) |
Drain Current-Max (Abs) (ID) | 22A |
Published | 2010 |
Drain to Source Breakdown Voltage | 30V |
Nominal Vgs | 1.6 V |
Series | PowerTrench®, SyncFET™ |
Height | 1.05mm |
Length | 5mm |
Width | 6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
JESD-609 Code | e3 |
Lead Free | Lead Free |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 3MOhm |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
JESD-30 Code | R-PDSO-N5 |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Ta 65W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 65W |
Case Connection | DRAIN |
Turn On Delay Time | 14 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3m Ω @ 21A, 10V |