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FDMS86104

FDMS86104 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDMS86104
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 856
  • Description: FDMS86104 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Vgs (Max) ±20V
Fall Time (Typ) 3.2 ns
Turn-Off Delay Time 14.3 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 2.9V
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.024Ohm
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 96 mJ
Height 1.05mm
Length 5mm
Width 6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Voltage 100V
Power Dissipation-Max 2.5W Ta 73W Tc
Element Configuration Single
Current 16A
Operating Mode ENHANCEMENT MODE
Power Dissipation 73W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 923pF @ 50V
Current - Continuous Drain (Id) @ 25°C 7A Ta 16A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 3.5ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
See Relate Datesheet

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