Parameters | |
---|---|
Terminal Finish | Tin (Sn) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Subcategory | FET General Purpose Power |
Max Power Dissipation | 900mW |
Number of Elements | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
Transistor Application | SWITCHING |
Rise Time | 5ns |
Drain to Source Voltage (Vdss) | 25V |
Polarity/Channel Type | N-CHANNEL |
Fall Time (Typ) | 4 ns |
Turn-Off Delay Time | 38 ns |
Continuous Drain Current (ID) | 27A |
Threshold Voltage | 1.4V |
Gate to Source Voltage (Vgs) | 12V |
Drain Current-Max (Abs) (ID) | 13A |
Drain to Source Breakdown Voltage | 25V |
Input Capacitance | 1.24nF |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Drain to Source Resistance | 1.2mOhm |
Rds On Max | 6 mΩ |
Nominal Vgs | 1.4 V |
Height | 800μm |
Length | 3.4mm |
Width | 3.4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Mount | Surface Mount |
Number of Pins | 8 |
Weight | 192mg |
Packaging | Tape & Reel (TR) |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |