Parameters | |
---|---|
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 22MOhm |
Terminal Finish | Tin (Sn) |
Additional Feature | ESD PROTECTION |
Subcategory | Other Transistors |
Voltage - Rated DC | -30V |
Max Power Dissipation | 1.6W |
Terminal Form | GULL WING |
Current Rating | -6.9A |
Number of Elements | 2 |
Number of Channels | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.6W |
Turn On Delay Time | 12 ns |
Power - Max | 900mW |
FET Type | 2 P-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 22m Ω @ 6.9A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1360pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 6.9A |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Rise Time | 13ns |
Drain to Source Voltage (Vdss) | 30V |
Fall Time (Typ) | 13 ns |
Turn-Off Delay Time | 68 ns |
Continuous Drain Current (ID) | -6.9A |
Threshold Voltage | -1.9V |
Gate to Source Voltage (Vgs) | 25V |
Drain to Source Breakdown Voltage | -30V |
Dual Supply Voltage | -30V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Max Junction Temperature (Tj) | 150°C |
FET Feature | Logic Level Gate |
Nominal Vgs | 1.9 V |
Height | 1.75mm |
Length | 5mm |
Width | 4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 187mg |