banner_page

FF650R17IE4BOSA1

INFINEON FF650R17IE4 IGBT Array & Module Transistor, PrimePACK2, N Channel, 650 A, 2 V, 4.15 kW, 1.7 kV, Module


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-FF650R17IE4BOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 641
  • Description: INFINEON FF650R17IE4 IGBT Array & Module Transistor, PrimePACK2, N Channel, 650 A, 2 V, 4.15 kW, 1.7 kV, Module (Kg)

Details

Tags

Parameters
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Number of Pins 10
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2013
Series PrimePack™2
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 7
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 11
JESD-30 Code R-XUFM-X7
Qualification Status Not Qualified
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 4150W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 720 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 650A
Turn Off Time-Nom (toff) 1870 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 54nF @ 25V
RoHS Status RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good