FGA15N120ANTDTU
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 3 |
| Terminal Finish | MATTE TIN |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE |
| Pin Count | 2 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Input Type | Standard |
| Power - Max | 186W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Reverse Recovery Time | 330ns |
| Voltage - Collector Emitter Breakdown (Max) | 1.2V |
| Current - Collector (Ic) (Max) | 30A |
| Turn On Time | 35 ns |
| Test Condition | 600V, 15A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 15A |
| Turn Off Time-Nom (toff) | 320 ns |
| IGBT Type | NPT and Trench |
| Gate Charge | 120nC |
| Current - Collector Pulsed (Icm) | 45A |
| Td (on/off) @ 25°C | 15ns/160ns |
| Switching Energy | 3mJ (on), 600μJ (off) |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
