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FGH50N6S2D

FGH50N6S2D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FGH50N6S2D
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 587
  • Description: FGH50N6S2D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Reverse Recovery Time 55ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V
Turn On Time 28 ns
Test Condition 390V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 30A
Turn Off Time-Nom (toff) 180 ns
Gate Charge 70nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 13ns/55ns
Switching Energy 260μJ (on), 250μJ (off)
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE, NOT REC (Last Updated: 5 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 463W
Current Rating 75A
Number of Elements 1
Element Configuration Single
Power Dissipation 463W
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 15ns
Polarity/Channel Type N-CHANNEL
See Relate Datesheet

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