Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | i4-Pac™-5 |
Number of Pins | 5 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Published | 2004 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Terminal Finish | TIN SILVER COPPER |
Additional Feature | HIGH RELIABILITY |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 100W |
Terminal Position | SINGLE |
Pin Count | 5 |
Number of Elements | 2 |
Configuration | Half Bridge |
Element Configuration | Dual |
Power Dissipation | 100W |
Case Connection | ISOLATED |
Turn On Delay Time | 50 ns |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Turn-Off Delay Time | 300 ns |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 30A |
Current - Collector Cutoff (Max) | 600μA |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 1.9V |
Input Capacitance | 1.1nF |
Turn On Time | 105 ns |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 20A |
Turn Off Time-Nom (toff) | 330 ns |
IGBT Type | NPT |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 1.1nF @ 25V |
VCEsat-Max | 2.4 V |
Height | 20.88mm |
Length | 19.91mm |
Width | 5.03mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |