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HFA3127BZ

INTERSIL HFA3127BZ Bipolar Transistor Array, NPN, 8 V, 150 mW, 37 mA, 130, SOIC


  • Manufacturer: Intersil (Renesas Electronics America)
  • Nocochips NO: 391-HFA3127BZ
  • Package: SOIC
  • Datasheet: PDF
  • Stock: 430
  • Description: INTERSIL HFA3127BZ Bipolar Transistor Array, NPN, 8 V, 150 mW, 37 mA, 130, SOIC (Kg)

Details

Tags

Parameters
Height 1.5mm
Length 10mm
Width 4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Package / Case SOIC
Number of Pins 16
Packaging Bulk
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 16
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Max Operating Temperature 125°C
Min Operating Temperature -55°C
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 8V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 65mA
Frequency 8GHz
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 16
Number of Elements 5
Polarity NPN
Configuration SEPARATE, 5 ELEMENTS
Power Dissipation-Max 150mW
Power Dissipation 150mW
Frequency (Max) 8GHz
Transistor Application AMPLIFIER
Gain Bandwidth Product 8 GHz
Collector Emitter Voltage (VCEO) 8V
Max Collector Current 65mA
JEDEC-95 Code MS-012AC
Collector Emitter Breakdown Voltage 8V
Transition Frequency 8000MHz
Collector Emitter Saturation Voltage 500mV
Frequency - Transition 8GHz
Collector Base Voltage (VCBO) 12V
Emitter Base Voltage (VEBO) 5.5V
DC Current Gain-Min (hFE) 40
Continuous Collector Current 65mA
See Relate Datesheet

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