HIP2101EIBZT
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) Exposed Pad |
| Surface Mount | YES |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Voltage - Supply | 9V~14V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Number of Functions | 1 |
| Supply Voltage | 12V |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | HIP2101 |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | Not Qualified |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 10ns 10ns |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Turn On Time | 0.056 µs |
| Output Peak Current Limit-Nom | 2A |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 0.8V 2.2V |
| Turn Off Time | 0.056 µs |
| High Side Voltage - Max (Bootstrap) | 114V |
| Height Seated (Max) | 1.68mm |
| Length | 4.89mm |
| Width | 3.9mm |
| RoHS Status | ROHS3 Compliant |
HIP2101EIBZT Overview
There is greater flexibility with the 8-SOIC (0.154, 3.90mm Width) Exposed Pad package.A packaging method of Cut Tape (CT) is indicated.Configuration is supported by 2 drivers.Surface Mount is mounted in the way.In the absence of a 9V~14V supply voltage, its superiority can be demonstrated.Gate drivers is designed wGate driversh a gate type of N-Channel MOSFET.-55°C~150°C TJ is the allowed temperature range for this device.Input type of Non-Inverting is used.Mosfet driver is based on 8 terminations.There are numerous related parts listed under its base part number HIP2101.A supply voltage of 12V is required for operation.Components with 8 pins are available.High-side voltage - Max (Bootstrap) can be as low as 114V.
HIP2101EIBZT Features
Embedded in the Cut Tape (CT) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2101EIBZT Applications
There are a lot of Renesas Electronics America Inc. HIP2101EIBZT gate drivers applications.
- Pulse transformer drivers
- PCMCIA applications
- Isolated Gate Driver Supplies
- High current laser/LED systems
- Refrigerator
- Commercial air-conditioning (CAC)
- High power buffers
- Commercial and agricultural vehicles (CAV)
- Active Clamp Flyback or Forward and Synchronous Rectifier
- 3-Phase Motor Inverter Driver
