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HN1A01F-GR(TE85L,F

Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-HN1A01F-GR(TE85L,F
  • Package: SC-74, SOT-457
  • Datasheet: -
  • Stock: 333
  • Description: Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Polarity PNP
Element Configuration Dual
Power - Max 300mW
Gain Bandwidth Product 80MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
RoHS Status RoHS Compliant
See Relate Datesheet

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