HOA0870-N51
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | PCB Mount |
| Number of Pins | 4 |
| Operating Temperature | -40°C~85°C |
| Packaging | Bulk |
| Published | 1997 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Type | Unamplified |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Output Voltage | 30V |
| Output Type | Phototransistor |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Output Configuration | Transistor |
| Power Dissipation | 100mW |
| Forward Current | 50mA |
| Response Time | 15μs |
| Rise Time | 15μs |
| Forward Voltage | 1.6V |
| Fall Time (Typ) | 15 μs |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 30mA |
| Sensing Distance | 0.125 (3.18mm) |
| Collector Emitter Breakdown Voltage | 30V |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Current - Collector (Ic) (Max) | 30mA |
| Reverse Breakdown Voltage | 3V |
| Sensing Method | Through-Beam |
| Collector Emitter Saturation Voltage | 400mV |
| Current - DC Forward (If) (Max) | 50mA |
| Input Current | 20mA |
| Reverse Voltage (DC) | 3V |
| Dark Current | 100nA |
| Height | 11.05mm |
| Length | 12.57mm |
| Width | 6.6mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
