Parameters | |
---|---|
Switching Energy | 1.3mJ (off) |
Gate-Emitter Voltage-Max | 25V |
Gate-Emitter Thr Voltage-Max | 6.4V |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~175°C TJ |
Packaging | Tube |
Published | 2008 |
Series | TrenchStop® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Input Type | Standard |
Power - Max | 310W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Voltage - Collector Emitter Breakdown (Max) | 1350V |
Current - Collector (Ic) (Max) | 40A |
Power Dissipation-Max (Abs) | 310W |
Turn On Time | 505 ns |
Test Condition | 600V, 20A, 15 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 20A |
Turn Off Time-Nom (toff) | 385 ns |
IGBT Type | Trench |
Gate Charge | 195nC |
Current - Collector Pulsed (Icm) | 60A |
Td (on/off) @ 25°C | -/335ns |