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IHW50N65R5XKSA1

IHW50N65R5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IHW50N65R5XKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 996
  • Description: IHW50N65R5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Power - Max 282W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Reverse Recovery Time 95 ns
Collector Emitter Breakdown Voltage 650V
Turn On Time 51 ns
Test Condition 400V, 25A, 8 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 50A
Turn Off Time-Nom (toff) 261 ns
Gate Charge 230nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 26ns/220ns
Switching Energy 740μJ (on), 180μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2013
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 282W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Input Type Standard
See Relate Datesheet

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