IPG20N06S4L11ATMA1
| Parameters | |
|---|---|
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Max Power Dissipation | 65W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 11 ns |
| Power - Max | 65W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 11.2m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 28μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 4020pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
| Rise Time | 3ns |
| Fall Time (Typ) | 19 ns |
| Turn-Off Delay Time | 58 ns |
| Continuous Drain Current (ID) | 20A |
| Gate to Source Voltage (Vgs) | 16V |
| Max Dual Supply Voltage | 60V |
| Drain-source On Resistance-Max | 0.0112Ohm |
| Avalanche Energy Rating (Eas) | 165 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
See Relate Datesheet
