IPI80N06S2L05AKSA2
| Parameters | |
|---|---|
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 300W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 19 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.8m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5700pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 230nC @ 10V |
| Rise Time | 93ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 90 ns |
| Turn-Off Delay Time | 67 ns |
| Continuous Drain Current (ID) | 80A |
| Gate to Source Voltage (Vgs) | 20V |
| Factory Lead Time | 1 Week |
| Max Dual Supply Voltage | 55V |
| Mount | Through Hole |
| Drain-source On Resistance-Max | 0.006Ohm |
| Avalanche Energy Rating (Eas) | 800 mJ |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Radiation Hardening | No |
| Number of Pins | 3 |
| RoHS Status | ROHS3 Compliant |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | OptiMOS™ |
| Pbfree Code | yes |
See Relate Datesheet
