Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerSFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Manufacturer Package Identifier | PG-HSOF-8 |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | FLAT |
JESD-30 Code | R-MBCC-F2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 429W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 429W |
Case Connection | DRAIN |
Turn On Delay Time | 50 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 0.77m Ω @ 100A, 10V |
Vgs(th) (Max) @ Id | 4V @ 230μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 22945pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 300A Tc |
Gate Charge (Qg) (Max) @ Vgs | 287nC @ 10V |
Rise Time | 22ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 61 ns |
Turn-Off Delay Time | 68 ns |
Continuous Drain Current (ID) | 300A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 40V |
Drain Current-Max (Abs) (ID) | 35A |
Drain-source On Resistance-Max | 0.00077Ohm |
Drain to Source Breakdown Voltage | 40V |
Pulsed Drain Current-Max (IDM) | 400A |
Avalanche Energy Rating (Eas) | 290 mJ |
Max Junction Temperature (Tj) | 175°C |
Feedback Cap-Max (Crss) | 300 pF |
Height | 2.4mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |