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IPP120N04S302AKSA1

MOSFET N-CH 40V 120A TO220-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPP120N04S302AKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 324
  • Description: MOSFET N-CH 40V 120A TO220-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series OptiMOS™
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.3m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 230μA
Input Capacitance (Ciss) (Max) @ Vds 14300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 120A
Drain-source On Resistance-Max 0.0023Ohm
Pulsed Drain Current-Max (IDM) 480A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 1880 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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