IPP50R140CPXKSA1
| Parameters | |
|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Lead Free | Lead Free |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 192W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 192W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 35 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 140m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 930μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 2540pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 23A Tc |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
| Mounting Type | Through Hole |
| Rise Time | 14ns |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Drain to Source Voltage (Vdss) | 550V |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Packaging | Tube |
| Published | 2008 |
| Vgs (Max) | ±20V |
| Series | CoolMOS™ |
| Fall Time (Typ) | 8 ns |
| JESD-609 Code | e3 |
| Continuous Drain Current (ID) | 23A |
| Pbfree Code | yes |
| JEDEC-95 Code | TO-220AB |
| Part Status | Not For New Designs |
| Gate to Source Voltage (Vgs) | 3.5V |
| Max Dual Supply Voltage | 500V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Drain-source On Resistance-Max | 0.14Ohm |
| Number of Terminations | 3 |
| Drain to Source Breakdown Voltage | 500V |
| Terminal Finish | Tin (Sn) |
| Pulsed Drain Current-Max (IDM) | 56A |
| Technology | MOSFET (Metal Oxide) |
| Avalanche Energy Rating (Eas) | 616 mJ |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
