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IPP80P04P4L04AKSA1

Trans MOSFET P-CH 40V 80A 3-Pin(3+Tab) TO-220


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPP80P04P4L04AKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 390
  • Description: Trans MOSFET P-CH 40V 80A 3-Pin(3+Tab) TO-220 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series Automotive, AEC-Q101, OptiMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 28 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 4.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 176nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +5V, -16V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 119 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage -40V
Drain-source On Resistance-Max 0.0071Ohm
Avalanche Energy Rating (Eas) 60 mJ
Height 15.65mm
Length 10mm
Width 4.4mm
RoHS Status RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet

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