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IR2110STRPBF

Surface Mount Tape & Reel (TR) Active EAR99 Gate Drivers ICs Non-Inverting 2 500V V 16-SOIC (0.295, 7.50mm Width) IR2110SPBF Half-Bridge


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IR2110STRPBF
  • Package: 16-SOIC (0.295, 7.50mm Width)
  • Datasheet: PDF
  • Stock: 774
  • Description: Surface Mount Tape & Reel (TR) Active EAR99 Gate Drivers ICs Non-Inverting 2 500V V 16-SOIC (0.295, 7.50mm Width) IR2110SPBF Half-Bridge (Kg)

Details

Tags

Parameters
High Side Voltage - Max (Bootstrap) 500V
Length 10.3mm
Width 7.5mm
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295, 7.50mm Width)
Surface Mount YES
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1996
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 16
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory MOSFET Drivers
Technology CMOS
Voltage - Supply 3.3V~20V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 15V
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IR2110SPBF
JESD-30 Code R-PDSO-G16
Qualification Status Not Qualified
Power Supplies 15V
Input Type Non-Inverting
Rise / Fall Time (Typ) 25ns 17ns
Channel Type Independent
Number of Drivers 2
Turn On Time 0.15 µs
Output Peak Current Limit-Nom 2.5A
Driven Configuration Half-Bridge
Gate Type IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink) 2A 2A
High Side Driver YES
Logic Voltage - VIL, VIH 6V 9.5V

IR2110STRPBF Description


The IR2110STRPBF is a power MOSFET and IGBT drivers with distinct high and low side referenced output channels. Ruggedized monolithic architecture is possible because to proprietary HVIC and latch immune CMOS technology. Down to 3.3V logic, logic inputs are compatible with typical CMOS or LSTTL output. A high pulse current buffer stage is used in the output drivers to reduce driver cross-conduction. The propagation delays are matched to make high-frequency applications easier to employ. The floating channel can be utilized to drive a high-side N-channel power MOSFET or IGBT with a voltage range of 500 to 600 volts.



IR2110STRPBF Features


  • Outputs in phase with inputs

  • Gate drive supply range from 10 to 20V

  • Undervoltage lockout for both channels

  • Cycle by cycle edge-triggered shutdown logic

  • Matched propagation delay for both channels

  • CMOS Schmitt-triggered inputs with pull-down

  • 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset

  • Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune



IR2110STRPBF Applications


  • Industrial


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